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SiHP30N60E
www.vishay.com
THERMAL RESISTANCE RATINGS
Vishay Siliconix
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thJC
TYP.
-
-
MAX.
62
0.5
UNIT
°C/W
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
? V DS /T J
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μA
Reference to 25 °C, I D = 250 μA
V DS = V GS , I D = 250 μA
V GS = ± 20 V
V DS = 600 V, V GS = 0 V
V DS = 600 V, V GS = 0 V, T J = 150 °C
600
-
2.0
-
-
-
-
0.64
-
-
-
-
-
-
4.0
± 100
1
100
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 10 V
I D = 15 A
-
0.104
0.125
?
Forward Transconductance a
g fs
V DS = 8 V, I D = 3 A
-
5.4
-
S
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
V GS = 0 V,
V DS = 100 V,
f = 1.0 MHz
-
-
-
2600
138
3
-
-
-
Effective Output Capacitance, Energy
Related b
Effective Output Capacitance, Time
Related c
Total Gate Charge
C o(er)
C o(tr)
Q g
V DS = 0 V to 480 V, V GS = 0 V
-
-
-
98
346
85
-
-
130
pF
Gate-Source Charge
Q gs
V GS = 10 V
I D = 15 A, V DS = 480 V
-
15
-
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
39
19
-
40
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
t r
t d(off)
t f
R g
V DD = 380 V, I D = 15 A,
V GS = 10 V, R g = 4.7 ?
f = 1 MHz, open drain
-
-
-
-
32
63
36
0.63
65
95
75
-
ns
?
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
I S
I SM
MOSFET symbol
showing the
integral reverse
p - n junction diode
G
D
S
-
-
-
-
29
65
A
Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
V SD
t rr
Q rr
I RRM
T J = 25 °C, I S = 15 A, V GS = 0 V
T J = 25 °C, I F = I S = 15 A,
dI/dt = 100 A/μs, V R = 20 V
-
-
-
-
-
402
7
32
1.3
605
15
65
V
ns
μC
A
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. C oss(er) is a fixed capacitance that gives the same energy as C oss while V DS is rising from 0 % to 80 % V DSS .
c. C oss(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 % to 80 % V DSS .
S12-3103- Rev. E, 24-Dec-12
2
Document Number: 91456
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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